onsemi FGA20S125P_SN00336 overview
ON Semiconductor FGA20S125P_SN00336 Igbt, Collector-Emitter Voltage-Max:1.25 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):40 A, Polarity/C...
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Part number or familyFGA20S125P_SN00336
Product typeDiscrete Semiconductor Product
Product details
Manufactured byonsemi
Product typeDiscrete Semiconductor Product
DescriptionON Semiconductor FGA20S125P_SN00336 Igbt, Collector-Emitter Voltage-Max:1.25 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):40 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionON Semiconductor FGA20S125P_SN00336 IGBT, Collector-Emitter Voltage-Max:1.25 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):40 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
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Discrete Semiconductor Product
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