onsemi NGTB10N60FG overview
ON Semiconductor NGTB10N60FG Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):20 A, Polarity/Channel Ty...
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Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor NGTB10N60FG Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO
DescriptionON Semiconductor NGTB10N60FG IGBT N-Channel, 600V, 10A, VCE(sat)=1.5V, TO-220F-3FS
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