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FGH60N60SFDTU

onsemi ยท Transistor

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onsemi FGH60N60SFDTU

onsemi FGH60N60SFDTU overview

ON Semiconductor FGH60N60SFDTU Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):120 A, Polarity/Channel...

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Part number or familyFGH60N60SFDTU
Product groupTransistor

Product details

Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor FGH60N60SFDTU Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):120 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionON Semiconductor FGH60N60SFDTU IGBT, Field Stop, 600V, 60A

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