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FGH40T120SMD

onsemi ยท Transistor

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onsemi FGH40T120SMD

onsemi FGH40T120SMD overview

ON Semiconductor FGH40T120SMD Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):80 A, Polarity/Channel ...

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Part number or familyFGH40T120SMD
Product groupTransistor

Product details

Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor FGH40T120SMD Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):80 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO
DescriptionON Semiconductor FGH40T120SMD IGBT, 1200V, 40A Field Stop Trench

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