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FGH25N120FTDS

onsemi ยท Modules

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onsemi FGH25N120FTDS

onsemi FGH25N120FTDS overview

ON Semiconductor FGH25N120FTDS Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):50 A, Polarity/Channel...

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Part number or familyFGH25N120FTDS
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FGH25N120FTDS Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):50 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionON Semiconductor FGH25N120FTDS IGBT, IGBT, 1200V, 25A, Field Stop Trench
DescriptionON Semiconductor FGH25N120FTDS IGBT, 1200V, 25A, Field Stop Trench

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Product group Modules Explore Modules Explore Transistor Explore IGBTs
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