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FGD3N60UNDF

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onsemi FGD3N60UNDF

onsemi FGD3N60UNDF overview

ON Semiconductor FGD3N60UNDF Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8.5 V, Collector Current-Max (IC):6 A, Polarity/Channel Typ...

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Part number or familyFGD3N60UNDF
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FGD3N60UNDF Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8.5 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
DescriptionON Semiconductor FGD3N60UNDF IGBT, IGBT, 600V, 3A, Short Circuit Rated
DescriptionON Semiconductor FGD3N60UNDF IGBT, 600V, 3A, Short Circuit Rated

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Product group Modules Explore Modules Explore Transistor Explore IGBTs
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