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FGB7N60UNDF

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onsemi FGB7N60UNDF

onsemi FGB7N60UNDF overview

ON Semiconductor FGB7N60UNDF Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8.5 V, Collector Current-Max (IC):14 A, Polarity/Channel Ty...

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Part number or familyFGB7N60UNDF
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FGB7N60UNDF Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8.5 V, Collector Current-Max (IC):14 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
DescriptionON Semiconductor FGB7N60UNDF IGBT, IGBT, 600V, 7A, Short Circuit Rated
DescriptionON Semiconductor FGB7N60UNDF IGBT, 600V, 7A, Short Circuit Rated

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Product group Modules Explore Modules Explore Transistor Explore IGBTs
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