onsemi FGB5N60UNDF overview
ON Semiconductor FGB5N60UNDF Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8.5 V, Collector Current-Max (IC):10 A, Polarity/Channel Ty...
Product details
Manufactured byonsemi
Product groupTransistor
DescriptionON Semiconductor FGB5N60UNDF Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:8.5 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
DescriptionON Semiconductor FGB5N60UNDF IGBT, 600V, 5A, Short Circuit Rated
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
onsemi
View onsemi profile
Available from
Sourcing support available
Start a sourcing request