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FGB40N60SM

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onsemi FGB40N60SM

onsemi FGB40N60SM overview

ON Semiconductor FGB40N60SM Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):80 A, Polarity/Channel Type:...

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Part number or familyFGB40N60SM
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FGB40N60SM Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):80 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
DescriptionON Semiconductor FGB40N60SM IGBT, IGBT, 600V, 40A, Field Stop
DescriptionON Semiconductor FGB40N60SM IGBT, 600V, 40A, Field Stop

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Product group Modules Explore Modules Explore Transistor Explore IGBTs
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