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FGB20N60SFD

onsemi ยท Modules

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onsemi FGB20N60SFD

onsemi FGB20N60SFD overview

ON Semiconductor FGB20N60SFD Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):40 A, Polarity/Channel Ty...

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Part number or familyFGB20N60SFD
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FGB20N60SFD Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):40 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
DescriptionON Semiconductor FGB20N60SFD IGBT, IGBT, 600V, 20A, Field Stop
DescriptionON Semiconductor FGB20N60SFD IGBT, 600V, 20A, Field Stop

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Product group Modules Explore Modules Explore Transistor Explore IGBTs
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