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FGA50S110P

onsemi ยท Modules

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onsemi FGA50S110P

onsemi FGA50S110P overview

ON Semiconductor FGA50S110P Igbt, Collector-Emitter Voltage-Max:1.1 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):50 A, Polarity/Channel Ty...

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Part number or familyFGA50S110P
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FGA50S110P Igbt, Collector-Emitter Voltage-Max:1.1 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):50 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionON Semiconductor FGA50S110P IGBT, IGBT, 1100V, 50A, Shorted-anode
DescriptionON Semiconductor FGA50S110P IGBT, 1100V, 50A, Shorted-anode

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Product group Modules Explore Modules Explore Transistor Explore IGBTs
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