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FGA30N65SMD

onsemi ยท Modules

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onsemi FGA30N65SMD

onsemi FGA30N65SMD overview

ON Semiconductor FGA30N65SMD Igbt, Collector-Emitter Voltage-Max:650 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):60 A, Polarity/Channel Type...

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Part number or familyFGA30N65SMD
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FGA30N65SMD Igbt, Collector-Emitter Voltage-Max:650 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):60 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionON Semiconductor FGA30N65SMD IGBT, IGBT, 650V, 30A, Field Stop
DescriptionON Semiconductor FGA30N65SMD IGBT, 650V, 30A, Field Stop

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Product group Modules Explore Modules Explore Transistor Explore IGBTs
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