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FGA15S125P

onsemi ยท Modules

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onsemi FGA15S125P

onsemi FGA15S125P overview

ON Semiconductor FGA15S125P Igbt, Collector-Emitter Voltage-Max:1.25 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):30 A, Polarity/Channel T...

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Part number or familyFGA15S125P
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FGA15S125P Igbt, Collector-Emitter Voltage-Max:1.25 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):30 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionON Semiconductor FGA15S125P IGBT, IGBT, 1250V, 15A, Shorted-anode
DescriptionON Semiconductor FGA15S125P IGBT, 1250V, 15A, Shorted-anode

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Product group Modules Explore Modules Explore Transistor Explore IGBTs
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