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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQT1N60CTF_WS Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):200 mA, Drain Current-Max (ID):200 mA, Drain-source On Resistance-Max:11.5 Ω
DescriptionON SEMICONDUCTOR FQT1N60CTF_WS ON Semiconductor FQT1N60CTF_WS MOSFET 1 N-channel 2.1 W SOT 223 4
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onsemi
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