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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor TIG111BF Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):23 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
DescriptionON Semiconductor TIG111BF Discrete Semiconductor, IGBT 600V 23A 2W TO220
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onsemi
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