onsemi SMS12T1G overview
ON Semiconductor SMS12T1G Transient Suppressor, Clamping Voltage-Max:19 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:14.1 V, Diode Element Material:SI...
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Product groupDiscrete Semiconductor Products
DescriptionON Semiconductor SMS12T1G Transient Suppressor, Clamping Voltage-Max:19 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:14.1 V, Diode Element Material:SILICON, Breakdown Voltage-Min:13.3 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 4 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:12 V, Number of Elements:4, Technology:AVALANCHE
DescriptionON SEMICONDUCTOR SMS12T1G MI SC74 QUAD ARRY 350W TR : RoHS Compliant: Yes
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Discrete Semiconductor Products
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