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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NVMSD6N303R2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):6 A, Drain Current-Max (ID):6 A, Drain-source On Resistance-Max:32 mΩ
DescriptionON Semiconductor NVMSD6N303R2G Discrete Semiconductor, MOSFET N-CH 30V 6A 8SOIC
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onsemi
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