Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NUS5531MTR2G Small Signal Field-effect Transistor, Collector Current-Max (IC):2 A, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:12 V, Number of Elements:1, DC Current Gain-Min (hFE):150, Drain Current-Max (ID):4.4 A, Drain-source On Resistance-Max:50 mΩ
DescriptionON Semiconductor NUS5531MTR2G Discrete Semiconductor, MOSFET/BJT SGL P-CH 12V 8-WDFN
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
onsemi
View onsemi profile
Product group
Modules
Explore Modules Explore Transistor Explore Small Signal Field-effect Transistors
Available from
Sourcing support available
Start a sourcing request