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NTMSD2P102LR2G

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onsemi NTMSD2P102LR2G

onsemi NTMSD2P102LR2G overview

ON Semiconductor NTMSD2P102LR2G Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIO...

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Part number or familyNTMSD2P102LR2G
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTMSD2P102LR2G Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2.3 A, Drain Current-Max (ID):2.3 A, Drain-source On Resistance-Max:90 mΩ
DescriptionON Semiconductor NTMSD2P102LR2G Discrete Semiconductor, MOSFET P-CH 20V 2.3A 8-SOIC

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