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Manufactured byON
Product groupModules
DescriptionON Semiconductor NTMFS4839NHT1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (ID):15 A, Drain-source On Resistance-Max:10.3 mΩ
DescriptionON Semiconductor NTMFS4839NHT1G Discrete Semiconductor, MOSFET N-CH 30V 9.5A SO-8FL
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