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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTLJS1102PTBG Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:8 V, Number of Elements:1, Drain Current-Max (Abs) (ID):6.2 A, Drain Current-Max (ID):3.7 A, Drain-source On Resistance-Max:36 mΩ
DescriptionON Semiconductor NTLJS1102PTBG Discrete Semiconductor, MOSFET P-CH 8V 3.7A 6-WDFN
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onsemi
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Modules
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