onsemi NTJD1155LT1G overview
ON Semiconductor NTJD1155LT1G Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:COMPLEX, Num...
Manufactured byonsemi
Part number or familyNTJD1155LT1G
Product groupDiscrete Semiconductor Products
Product details
Manufactured byonsemi
Product groupDiscrete Semiconductor Products
DescriptionON Semiconductor NTJD1155LT1G Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:COMPLEX, Number of Terminals:6, DS Breakdown Voltage-Min:8 V, Number of Elements:2, Drain Current-Max (Abs) (ID):1.3 A, Drain Current-Max (ID):1.3 A, Drain-source On Resistance-Max:175 mΩ
DescriptionOn Semiconductor NTJD1155LT1G Discrete Semiconductor Products
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
onsemi
View onsemi profile
Product group
Discrete Semiconductor Products
Explore Discrete Semiconductor Products Explore Transistor Explore Small Signal Field-effect Transistors
Available from
Sourcing support available
Start a sourcing request