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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTHD4N02FT1G Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2.7 A, Drain Current-Max (ID):2.9 A, Drain-source On Resistance-Max:80 mΩ
DescriptionON Semiconductor NTHD4N02FT1G Discrete Semiconductor, MOSFET N-CH 20V 2.9A CHIPFET
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onsemi
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Modules
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