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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTHD3101FT3 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (ID):3.2 A, Drain-source On Resistance-Max:80 mΩ
DescriptionON Semiconductor NTHD3101FT3 Discrete Semiconductor, MOSFET P-CH 20V 3.2A CHIPFET
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onsemi
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