onsemi NTHD2110TT1G overview
ON Semiconductor NTHD2110TT1G Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE...
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Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor NTHD2110TT1G Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:12 V, Number of Elements:1, Drain Current-Max (ID):4.5 A, Drain-source On Resistance-Max:40 mΩ
DescriptionON Semiconductor NTHD2110TT1G Discrete Semiconductor, MOSFET P-CH 12V 4.5A CHIPFET
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