Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTGS3441BT1G Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (Abs) (ID):3 A, Drain Current-Max (ID):2.2 A, Drain-source On Resistance-Max:90 mΩ
DescriptionON Semiconductor NTGS3441BT1G Discrete Semiconductor, MOSFET P-CH 20V 2.2A 6-TSOP
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
onsemi
View onsemi profile
Product group
Modules
Explore Modules Explore Transistor Explore Small Signal Field-effect Transistors
Available from
Sourcing support available
Start a sourcing request