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NTGD3147FT1G

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onsemi NTGD3147FT1G

onsemi NTGD3147FT1G overview

ON Semiconductor NTGD3147FT1G Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE...

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Part number or familyNTGD3147FT1G
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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTGD3147FT1G Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (ID):2.2 A, Drain-source On Resistance-Max:145 mΩ
DescriptionON Semiconductor NTGD3147FT1G Discrete Semiconductor, MOSFET P-CH 20V 2.2A 6-TSOP

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