onsemi NTDV3055L104-1G overview
NTDV3055L104-1G is a transistor made by onsemi. ON Semiconductor NTDV3055L104-1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):12 A…
Product details
Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor NTDV3055L104-1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):12 A, Drain Current-Max (ID):12 A, Drain-source On Resistance-Max:104 mΩ
DescriptionON Semiconductor NTDV3055L104-1G Discrete Semiconductor, MOSFET N-CH 60V 12A IPAK
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