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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTD60N02R-35G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:25 V, Number of Elements:1, Drain Current-Max (ID):32 A, Drain-source On Resistance-Max:10.5 mΩ
DescriptionON Semiconductor NTD60N02R-35G Discrete Semiconductor, MOSFET N-CH 25V 8.5A IPAK
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onsemi
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