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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTD4913N-35G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (ID):7.7 A, Drain-source On Resistance-Max:15 mΩ
DescriptionON Semiconductor NTD4913N-35G Discrete Semiconductor, MOSFET N-CH 30V 32A IPAK TRIMMED
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onsemi
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