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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTD4806N1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (ID):11 A, Drain-source On Resistance-Max:9.4 mΩ
DescriptionON Semiconductor NTD4806N-1G Discrete Semiconductor, MOSFET N-CH 30V 11A IPAK
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onsemi
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| # | Name |
|---|---|
| 1 | NTD4806N1G |