onsemi NGTB30N60FLWG overview
ON Semiconductor NGTB30N60FLWG Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):60 A, Polarity/Channel ...
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Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor NGTB30N60FLWG Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):60 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO
DescriptionON Semiconductor NGTB30N60FLWG Discrete Semiconductor, IGBT 600V 60A 250W TO247
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