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DescriptionON Semiconductor NGB8206N Igbt, Collector-Emitter Voltage-Max:390 V, Gate-Emitter Thr Voltage-Max:2.1 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:2, Number of Elements:1
DescriptionON Semiconductor NGB8206N Discrete Semiconductor, IGBT 390V 20A 150W D2PAK
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