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MMQA6V2T1

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onsemi MMQA6V2T1

onsemi MMQA6V2T1 overview

ON Semiconductor MMQA6V2T1 Transient Suppressor, Clamping Voltage-Max:9 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:6.2 V, Diode Element Material:SIL...

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Part number or familyMMQA6V2T1

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Manufactured byonsemi
Product groupDiscrete Semiconductor Products
DescriptionON Semiconductor MMQA6V2T1 Transient Suppressor, Clamping Voltage-Max:9 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:6.2 V, Diode Element Material:SILICON, Breakdown Voltage-Min:5.89 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 4 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:4 V, Number of Elements:4, Technology:AVALANCHE
DescriptionOn Semiconductor MMQA6V2T1 Discrete Semiconductor Products

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Product group Discrete Semiconductor Products Explore Discrete Semiconductor Products Explore Transient Suppressors
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