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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMQA5V6T1 Transient Suppressor, Clamping Voltage-Max:8 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:5.6 V, Diode Element Material:SILICON, Breakdown Voltage-Min:5.32 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 4 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:3 V, Number of Elements:4, Technology:AVALANCHE
DescriptionON Semiconductor MMQA5V6T1 ESD Protection Diode, ESD / Surge Protector
DescriptionON SEMICONDUCTOR MMQA5V6T1 Transient Voltage Suppression Diode
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onsemi
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