onsemi MMBZ6V2ALT1G overview
ON Semiconductor MMBZ6V2ALT1G Transient Suppressor, Clamping Voltage-Max:8.7 V, Reverse Current-Max:500 nA, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:...
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Part number or familyMMBZ6V2ALT1G
Product groupDiscrete Semiconductor Products
Product details
Manufactured byonsemi
Product groupDiscrete Semiconductor Products
DescriptionON Semiconductor MMBZ6V2ALT1G Transient Suppressor, Clamping Voltage-Max:8.7 V, Reverse Current-Max:500 nA, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:6.2 V, Diode Element Material:SILICON, Breakdown Voltage-Min:5.89 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:3 V, Number of Elements:2, Technology:ZENER
DescriptionOn Semiconductor MMBZ6V2ALT1G Discrete Semiconductor Products
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Discrete Semiconductor Products
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