onsemi MMBZ27VCLT1G overview
MMBZ27VCLT1G by onsemi is listed under Discrete Semiconductor Products. ON Semiconductor MMBZ27VCLT1G Transient Suppressor, Clamping Voltage-Max:38 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:27 V, Diode Element Material:SILICON, Breakdown Voltage-Min:25.65 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE…
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Manufactured byonsemi
Product typeDiscrete Semiconductor Product
DescriptionON Semiconductor MMBZ27VCLT1G Transient Suppressor, Clamping Voltage-Max:38 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:27 V, Diode Element Material:SILICON, Breakdown Voltage-Min:25.65 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON CATHODE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:22 V, Number of Elements:2, Technology:ZENER
DescriptionOn Semiconductor MMBZ27VCLT1G Discrete Semiconductor Products
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onsemi
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Discrete Semiconductor Product
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