onsemi MMBZ27VCLT1 overview
ON Semiconductor MMBZ27VCLT1 Transient Suppressor, Clamping Voltage-Max:38 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:28.35 V, Diode Element Materia...
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Product groupDiscrete Semiconductor Products
DescriptionON Semiconductor MMBZ27VCLT1 Transient Suppressor, Clamping Voltage-Max:38 V, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:28.35 V, Diode Element Material:SILICON, Breakdown Voltage-Min:25.65 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON CATHODE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:22 V, Number of Elements:2, Technology:ZENER
DescriptionOn Semiconductor MMBZ27VCLT1 Discrete Semiconductor Products
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