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MMBZ18VALT1G

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onsemi MMBZ18VALT1G

onsemi MMBZ18VALT1G overview

ON Semiconductor MMBZ18VALT1G Transient Suppressor, Clamping Voltage-Max:25 V, Reverse Current-Max:50 nA, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:18...

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Part number or familyMMBZ18VALT1G
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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMBZ18VALT1G Transient Suppressor, Clamping Voltage-Max:25 V, Reverse Current-Max:50 nA, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:18 V, Diode Element Material:SILICON, Breakdown Voltage-Min:17.1 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:14.5 V, Number of Elements:2, Technology:ZENER
DescriptionOn-Semiconductor MMBZ18VALT1G Circuit Protection, ESD Suppressor Zener Uni-Dir/Bi-Dir 14.5V Automotive 3-Pin SOT-23 T/R
DescriptionON SEMICONDUCTOR MMBZ18VALT1G ZEN SOT23 REG .225W 15V RoHS Compliant: Yes

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