Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMBZ12VALT1G Transient Suppressor, Clamping Voltage-Max:17 V, Reverse Current-Max:200 nA, Power Dissipation-Max:225 mW, Breakdown Voltage-Nom:12 V, Diode Element Material:SILICON, Breakdown Voltage-Min:11.4 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:8.5 V, Number of Elements:2, Technology:ZENER
DescriptionOn-Semiconductor MMBZ12VALT1G Circuit Protection, ESD Suppressor Zener Uni-Dir/Bi-Dir 8.5V Automotive 3-Pin SOT-23 T/R
DescriptionON SEMICONDUCTOR MMBZ12VALT1G ZEN SOT23 REG .225W 12V RoHS Compliant: Yes
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
onsemi
View onsemi profile
Product group
Modules
Explore Modules Explore Discrete Semiconductor Products Explore Circuit Protection
Available from
Sourcing support available
Start a sourcing request