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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMBV809LT1G Varactor, Diode Capacitance-Nom:5.3 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:20 V, Diode Type:VARIABLE CAPACITANCE DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:20 V, Number of Elements:1
DescriptionON Semiconductor MMBV809LT1G Discrete Semiconductor, DIODE TUNING SS 20V SOT23
DescriptionOn Semiconductor MMBV809LT1G Discrete Semiconductor Products
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