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MMBV109LT1G

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onsemi MMBV109LT1G

onsemi MMBV109LT1G overview

ON Semiconductor MMBV109LT1G Varactor, Diode Capacitance-Nom:29 pF, Power Dissipation-Max:200 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:30 V, Di...

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Part number or familyMMBV109LT1G
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMBV109LT1G Varactor, Diode Capacitance-Nom:29 pF, Power Dissipation-Max:200 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:30 V, Diode Type:VARIABLE CAPACITANCE DIODE, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:30 V, Number of Elements:1
DescriptionON Semiconductor MMBV109LT1G Discrete Semiconductor, DIODE TUNING SS 30V SOT23
DescriptionOn Semiconductor MMBV109LT1G Discrete Semiconductor Products

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Product group Modules Explore Modules Explore Discrete Semiconductor Products Explore Varactors
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