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MMBD354LT1G

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onsemi MMBD354LT1G

onsemi MMBD354LT1G overview

ON Semiconductor MMBD354LT1G Microwave Mixer Diode, Diode Capacitance-Max:1 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:MIXER D...

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Part number or familyMMBD354LT1G
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMBD354LT1G Microwave Mixer Diode, Diode Capacitance-Max:1 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:COMMON CATHODE, 2 ELEMENTS, Surface Mount:YES, Number of Elements:2
DescriptionON Semiconductor MMBD354LT1G Discrete Semiconductor, DIODE SCHOTTKY 7V 225MW SOT23-3
DescriptionON SEMICONDUCTOR MMBD354LT1G SS SOT23 SHKY DIO 7V TR RoHS Compliant: Yes

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