onsemi MMBD353LT1G overview
ON Semiconductor MMBD353LT1G Microwave Mixer Diode, Diode Capacitance-Max:1 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:MIXER D...
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Product groupDiscrete Semiconductor Products
DescriptionON Semiconductor MMBD353LT1G Microwave Mixer Diode, Diode Capacitance-Max:1 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Number of Elements:2
DescriptionOn Semiconductor MMBD353LT1G Discrete Semiconductor Products
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Discrete Semiconductor Products
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