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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMBD352LT1G Microwave Mixer Diode, Diode Capacitance-Max:1 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Number of Elements:2
DescriptionOn Semiconductor MMBD352LT1G Discrete Semiconductor Products
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onsemi
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Modules
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