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MMBD101LT1G

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onsemi MMBD101LT1G

onsemi MMBD101LT1G overview

ON Semiconductor MMBD101LT1G Microwave Mixer Diode, Diode Capacitance-Max:1 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:MIXER D...

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Part number or familyMMBD101LT1G
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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMBD101LT1G Microwave Mixer Diode, Diode Capacitance-Max:1 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SINGLE, Surface Mount:YES, Number of Elements:1, Technology:SCHOTTKY
DescriptionON Semiconductor MMBD101LT1G Discrete Semiconductor, DIODE SCHOTTKY 7V 225MW SOT23-3
DescriptionOn Semiconductor MMBD101LT1G Discrete Semiconductor Products

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