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DescriptionON Semiconductor MJW21196 Power Bipolar Transistor, Collector-Emitter Voltage-Max:250 V, Collector Current-Max (IC):16 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):8, Transition Frequency-Nom (fT):4 MHz
DescriptionON Semiconductor MJW21196 Audio Transistor, Bipolar Transistor, NPN, 250 V, 16 A
DescriptionOn Semiconductor MJW21196 Discrete Semiconductor Products
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