onsemi MJE5730 overview
MJE5730 is a transistor made by onsemi. ON Semiconductor MJE5730 Power Bipolar Transistor, Collector-Emitter Voltage-Max:300 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:PNP, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):10, Transition…
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Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor MJE5730 Power Bipolar Transistor, Collector-Emitter Voltage-Max:300 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:PNP, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):10, Transition Frequency-Nom (fT):10 MHz
DescriptionON Semiconductor MJE5730 Discrete Semiconductor, TRANS PNP 300V 1A TO220AB
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