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MJD112-001

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onsemi MJD112-001

onsemi MJD112-001 overview

ON Semiconductor MJD112-001 Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:NPN, Surface Mo...

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Part number or familyMJD112-001
Product typeIC Device

Product details

Manufactured byonsemi
Product typeIC Device
DescriptionON Semiconductor MJD112-001 Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):200, Transition Frequency-Nom (fT):25 MHz
DescriptionON Semiconductor MJD112-001 Discrete Semiconductor, TRANS NPN DARL 100V 2A IPAK

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Product type IC Device Explore IC Devices Explore Transistor Explore Power Bipolar Transistors
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