Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MBD110DWT1G Microwave Mixer Diode, Forward Voltage-Max (VF):600 mV, Diode Capacitance-Max:1 pF, Power Dissipation-Max:120 mW, Diode Element Material:SILICON, Diode Type:MIXER DIODE, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:7 V, Number of Elements:2, Technology:SCHOTTKY
DescriptionON Semiconductor MBD110DWT1G Discrete Semiconductor, RF DIODE SCHOTTKY 7V 120MW SC88
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onsemi
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